SPP08N50C3数据手册

SPA08N50C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dtrated

• Ultra low effective capacitances• Improved transconductance

P-TO220-3-31123VDS @ TjmaxRDS(on)ID

5600.67.6

VΩA

PG-TO220FP PG-TO262 PG-TO220• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Type

SPP08N50C3SPI08N50C3SPA08N50C3

PackagePG-TO220PG-TO262PG-TO220FP

Ordering CodeQ67040-S4567Q67040-S4568SP000216306

Marking08N50C308N50C308N50C3

Maximum RatingsParameter

SymbolID

ValueSPP_I

SPA

Unit

Continuous drain current

TC = 25 °CTC = 100 °C

A

7.64.6

7.61)4.61)22.82300.57.6±20

±30

Pulsed drain current, tp limited by TjmaxAvalanche energy, single pulse

ID=5.5A,VDD=50V

IDpulsEASEARIARVGSVGSPtot

22.82300.57.6±20

±30

AmJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=7.6A,VDD=50V

Avalanche current, repetitive tAR limited by TjmaxGate source voltage

AVW

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25°C

8332

Operating and storage temperatureTj,Tstg-55...+150°C

6)

Reverse diode dv/dt dv/dt 15 V/nsRev. 2.91 Page 1

2009-11-27

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SPA08N50C3

Maximum RatingsParameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 400 V, ID = 7.6 A, Tj = 125 °C

dv/dt50V/ns

Thermal CharacteristicsParameter

Thermal resistance, junction - case

Thermal resistance, junction - case, FullPAKThermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAKSoldering temperature, wavesoldering1.6 mm (0.063 in.) from case for 10s3)

Electrical Characteristics, at Tj=25°C unless otherwise specifiedParameter

Symbol

Conditions

min.

Drain-source breakdown voltageV(BR)DSSVGS=0V,ID=0.25mADrain-Source avalanchebreakdown voltageGate threshold voltageZero gate voltage drain current

VGS(th)IDSS

ID=350µA,VGS=VDSVDS=500V,VGS=0V,Tj=25°CTj=150°C

Symbol

min.

RthJCRthJC_FPRthJARthJAFPTsold

-----

Valuestyp.-----

Unit

max.1.53.96280260

°C

K/W

Valuestyp.-60030.5--0.51.51.2

max.--3.9

500-2.1------

UnitV

V(BR)DSVGS=0V,ID=7.6A

µA11001000.6--nAΩ

Gate-source leakage current

IGSSVGS=20V,VDS=0VVGS=10V,ID=4.6ATj=25°CTj=150°C

Drain-source on-state resistanceRDS(on)

Gate input resistance

RG

f=1MHz, open drain

Rev. 2.91 Page 2

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Electrical CharacteristicsParameter

TransconductanceInput capacitanceOutput capacitance

Reverse transfer capacitance

SymbolgfsCissCossCrss

Conditions

min.

VDS≥2*ID*RDS(on)max,ID=4.6A

VGS=0V,VDS=25V,f=1MHz

Valuestyp.675035012563065607

max.----------------

UnitSpF

Effective output capacitance,4)Co(er)energy related

Effective output capacitance,5)Co(tr)time related

Turn-on delay timeRise time

Turn-off delay timeFall time

VGS=0V,VDS=400

td(on)trtd(off)tf

VDD=380V,VGS=0/10V,ID=7.6A,RG=12Ω

----

ns

Gate Charge CharacteristicsGate to source chargeQgsGate to drain chargeGate charge totalGate plateau voltage

QgdQg

VDD=400V,ID=7.6A

----

317325

----

nC

VDD=400V,ID=7.6A,VGS=0 to 10V

V(plateau)VDD=400V,ID=7.6A

V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as P3Soldering temperature for TO-263: 220°C, reflow4C5C

o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

AV=EAR*f.

6I<=I, di/dt<=400A/us, VSDDDClink=400V, VpeakRev. 2.91 Page 3

2009-11-27

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SPA08N50C3

Electrical CharacteristicsParameter

Inverse diode continuousforward current

Inverse diode direct current,pulsed

Inverse diode forward voltageReverse recovery timeReverse recovery chargePeak reverse recovery currentPeak rate of fall of reverse recovery current

Typical Transient Thermal CharacteristicsSymbolSPP_IRth1Rth2Rth3Rth4Rth5Rth60.0240.0460.0850.3080.3170.112TjSymbolISISMVSDtrrQrrIrrmdirr/dt

Conditions

min.

TC=25°C

Valuestyp.--13703.625700

max.7.622.81.2------

UnitA

VGS=0V,IF=ISVR=400V,IF=IS , diF/dt=100A/µs

-----

VnsµCAA/µs

Tj=25°C

ValueSPA0.0240.0460.0850.1950.452.511Rth1UnitK/WSymbolSPP_ICth1Cth2Cth3Cth4Cth5Cth6Rth,nTcaseValueSPA0.000120.00045780.0006450.0018670.0075580.4120.000120.00045780.0006450.0018670.0047950.045UnitWs/KExternal HeatsinkPtot(t)Cth1Cth2Cth,nTambRev. 2.91 Page 4

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1 Power dissipationPtot = f(TC)

100SPP08N50C32 Power dissipation FullPAK

Ptot = f(TC)

35W W807025Ptot6050403020Ptot201510520406080100120160001000°C20406080100120TC °C150TC3 Safe operating areaID= f ( VDS )

parameter : D = 0 , TC=25°C

1024 Safe operating area FullPAKID = f (VDS)

parameter:D = 0, TC = 25°C

102 A A101101ID100ID10010-1tp = 0.001 mstp = 0.01 mstp = 0.1 mstp = 1 msDC10-1tp = 0.001 mstp = 0.01 mstp = 0.1 mstp = 1 mstp = 10 msDC123

10-201010110210 VVDS3

10-2010101010 VVDSRev. 2.91 Page 5

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5 Transient thermal impedanceZthJC = f(tp)parameter:D=tp/T

1016 Transient thermal impedance FullPAKZthJC = f(tp)parameter:D = tp/t

101 K/W K/W

100100ZthJC10-1ZthJCD = 0.5D = 0.2D = 0.1D = 0.05D = 0.02D = 0.01single pulse10-110-210-2D = 0.5D = 0.2D = 0.1D = 0.05D = 0.02D = 0.01single pulse10-3-71010-610-510-410-3 stp10-1

10-3-7-6-5-4-3-2-1101010101010101

s10tp7 Typ. output characteristicID = f (VDS);Tj=25°Cparameter:tp= 10 µs, VGS

248 Typ. output characteristicID = f (VDS);Tj=150°Cparameter:tp= 10 µs, VGS

13 A20V10V8V A7V111020V8V6.5V6VIDID166,5V9875.5V126V655V85,5V434.5V4V45V4,5V21250024680051015VDS V10121416182022 V25VDSRev. 2.91 Page 6

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SPA08N50C3

9 Typ. drain-source on resistanceRDS(on)=f(ID)

parameter:Tj=150°C,VGS

1010 Drain-source on-state resistanceRDS(on) = f(Tj)

parameter : ID = 4.6 A, VGS = 10 V

3.4SPP08N50C3Ω84V4.5VΩ2.8RDS(on)5.5VRDS(on)7654321005V2.421.61.20.80.40-6098%typ6V6.5V8V20V24681012 A15ID-202060100°C180Tj11 Typ. transfer characteristicsID= f ( VGS ); VDS≥ 2 x ID x RDS(on)maxparameter: tp = 10 µs

2412 Typ. gate charge

VGS=f (QGate)

parameter:ID = 7.6 A pulsed

16SPP08N50C3 A25°CV201812ID16141210150°CVGS100,2VDS max0,8VDS max8686422002464 V1000510152025303540nC50VGSQGateRev. 2.91 Page 7

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13 Forward characteristics of body diode14 Avalanche SOAIF = f (VSD)

parameter:Tj , tp= 10 µs

102SPP08N50C3A101FI100Tj = 25 °C typTj = 150 °C typTj = 25 °C (98%)Tj = 150 °C (98%)10-100.40.81.21.622.4V3VSD15 Avalanche energyEAS = f(Tj)

par.:ID = 5.5 A, VDD = 50 V

260mJ220200S180AE16014012010080604020020406080100120°C160TjRev. 2.91 PIAR = f (tAR)par.:Tj≤ 150 °C

8A6RAI5Tj(START)=25°C43Tj(START)=125°C21010-310-210-1100101102µs104

tAR16 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

SPP08N50C3600VS570SD560)RB550(V540530520510500490480470460450-60-202060100°C180Tjage 8

2009-11-27

17 Avalanche power lossesPAR = f (f )

parameter:EAR=0.5mJ

500 WRAP3002001000104105 MHz106

f19 Typ. Coss stored energyEoss=f(VDS)

4 µJ3ssoE2.521.510.500100200300 V500VDSRev. 2.91 PSPP08N50C3, SPI08N50C3

SPA08N50C3

18 Typ. capacitancesC = f(VDS)

parameter:VGS=0V,f=1 MHz

104 pF103CissC102Coss101Crss1000100200300 V500VDSage 9

2009-11-27

Definition of diodes switching characteristics

Rev. 2.91 Page 10

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2009-11-27

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SPA08N50C3

PG-TO220-3-1, PG-TO220-3-21

Rev. 2.91 Page 11

2009-11-27

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SPA08N50C3

PG-TO-220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)

Rev. 2.91 Page 12

2009-11-27

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PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)

Rev. 2.91 Page 13

2009-11-27

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SPA08N50C3

Published by

Infineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München

© Infineon Technologies AG 1999All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.

Rev. 2.91 Page 14

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