WAFER WITH SOI STRUCTURE HAVING A BURIED INSULATIN

专利名称：WAFER WITH SOI STRUCTURE HAVING A

BURIED INSULATING MULTILAYER

STRUCTURE AND SEMICONDUCTOR DEVICESTRUCTURE

发明人：Elliot John Smith,Sven Beyer,Nigel Chan,Jan

Hoentschel

申请号：US14853146申请日：20150914

公开号：US20170077314A1公开日：20170316

专利附图：

摘要：The present disclosure provides, in a first aspect, a semiconductor devicestructure, including an SOI substrate comprising a semiconductor base substrate, aburied insulating structure formed on the semiconductor base substrate and asemiconductor film formed on the buried insulating structure, wherein the buriedinsulating structure comprises a multilayer stack having a nitride layer interposedbetween two oxide layers. The semiconductor device structure further includes asemiconductor device formed in and above an active region of the SOI substrate, and aback bias contact which is electrically connected to the semiconductor base substratebelow the semiconductor device.

申请人：GLOBALFOUNDRIES Inc.

地址：Grand Cayman KY

国籍：KY

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