专利名称：Hall effect sensor
发明人：Jean-Louis Robert,Julien Pernot,Jean
Camassel,Sylvie Contreras
申请号：US10374656申请日：20030226公开号：US06734514B2公开日：20040511
专利附图：
摘要：A metrological Hall effect sensor with sensitivity to temperature less than 250ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C.formed in a multilayer structure comprising a thin active layer deposited on a substrate,
wherein the substrate is made of monocrystalline silicon carbide (SiC), and wherein thethin active layer is made of a weakly type n-doped silicon carbide (SiC) semiconductor inthe exhaustion regime.
申请人：CENTRE NATIONAL DE LA RECHERCHE-SCIENTIFIQUE - CNRS
代理机构：Piper Rudnick LLP
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