专利名称：THIN-FILM SEMICONDUCTOR DEVICE AND
METHOD FOR MANUFACTURING THE SAME
发明人：Katsunori Mitsuhashi,Tetsuya Ide申请号：US12405680申请日：20090317
公开号：US20090242891A1公开日：20091001
专利附图：
摘要：A thin-film semiconductor device including a transparent insulating substrate, anisland semiconductor layer formed on the transparent insulating substrate and includinga source region containing a first-conductivity-type impurity and a drain region containing
a first-conductivity-type impurity and spaced apart from the source region, a gateinsulating film and a gate electrode which are formed on a portion of the island
semiconductor layer, which is located between the source region and the drain region, asidewall spacer having a 3-ply structure including a first oxide film, a nitride film and asecond oxide film, which are respectively formed on a sidewall of the gate electrode, andan interlayer insulating film covering the island semiconductor layer and the gateelectrode.
申请人：Katsunori Mitsuhashi,Tetsuya Ide
地址：Yokohama-shi JP,Yokohama-shi JP
国籍：JP,JP
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