专利名称：Manufacturing process of a high integration
density power MOS device
发明人：Delfo Nunziato Sanfilippo申请号：US09457070申请日：19991207公开号：US06541318B2公开日：20030401
专利附图：
摘要：Process of manufacturing a semiconductor device comprising a step of formingrecessed zones in a semiconductor layer of a first conductivity type, a step of oxidationfor forming a gate oxide layer at the sidewalls of the recessed zones, a step of forming a
polysilicon gate electrode inside the recessed zones, a step of forming body regions of asecond conductivity type in the semiconductor layer between the recessed zones, and astep of forming source regions of the first conductivity type in the body regions. Thestep of forming recessed zones comprises a step of local oxidation of the surface of thesemiconductor layer wherein the recessed zones will be formed, with an oxide growth atthe semiconductor layer's cost in order to obtain thick oxide regions penetrating in thesemiconductor layer, and a step of etching wherein the oxide of the thick oxide regions isremoved.
申请人：STMICROELECTRONICS, S.R.L.
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